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1

Modeling software requirement with timing diagram and Simulink Stateflow

Hongsuk Lee, Kihyun Chung, Hyunsang Park, Kyunghee Choi

Journal:

Information and Software Technology

Year:

2011

Language:

english

File:

PDF, 1.42 MB

english, 2011

2

Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices

Tae-Wook Kim, Seung-Hwan Oh, Joonmyoung Lee, Hyejung Choi, Gunuk Wang, Jubong Park, Dong-Yu Kim, Hyunsang Hwang, Takhee Lee

Journal:

Organic Electronics

Year:

2010

Language:

english

File:

PDF, 525 KB

english, 2010

3

Fast detection and visualization of network attacks on parallel coordinates

Hyunsang Choi, Heejo Lee, Hyogon Kim

Journal:

Computers & Security

Year:

2009

Language:

english

File:

PDF, 1.29 MB

english, 2009

4

Electrical properties of low temperature sintering multilayer piezoelectric transformer using Pb(Mn1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3–Pb(Zr, Ti)O3 ceramics

Juhyun Yoo, Kookjin Kim, Changae Lee, Lakhoon Hwang, Dongsoo Paik, Hyunsang Yoon, HyungWook Choi

Journal:

Sensors and Actuators A: Physical

Year:

2007

Language:

english

File:

PDF, 518 KB

english, 2007

5

Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

Dongsoo Lee, Hyejung Choi, Hyunjun Sim, Dooho Choi, Hyunsang Hwang, Myoung-Jae Lee, Sun-Ae Seo, Yoo, I.K.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 462 KB

english, 2005

6

Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride

Park, Nae-Man, Jeon, Sang-Hun, Yang, Hyun-Deok, Hwang, Hyunsang, Park, Seong-Ju, Choi, Suk-Ho

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 759 KB

english, 2003

7

[IEEE 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2011) - Incheon, Korea (South) (2011.07.4-2011.07.7)] 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Characterization and passivation of band gap states in metal-oxide-semiconductor field effect transistors with polycrystalline silicon channel

Tae-Young Jang,, Dong-Hyoub Kim,, Jungwoo Kim,, Jun Suk Chang,, Hoichang Yang,, Jeong, Jae Kyeong, Daeseok Lee,, Hyunsang Hwang,, Choi, Rino

Year:

2011

Language:

english

File:

PDF, 224 KB

english, 2011

8

Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High- k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing

Park, Hokyung, Choi, Rino, Lee, Byoung Hun, Hwang, Hyunsang

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 111 KB

english, 2007

9

[IEEE 2017 4th International Conference on Computer Applications and Information Processing Technology (CAIPT) - Kuta Bali, Indonesia (2017.8.8-2017.8.10)] 2017 4th International Conference on Computer Applications and Information Processing Technology (CAIPT) - HXD: Hybrid XSS detection by using a headless browser

Choi, Hyunsang, Hong, Seongjin, Cho, Sanghyun, Kim, Young-Gab

Year:

2017

Language:

english

File:

PDF, 85 KB

english, 2017

10

Hardware Implementation of Neural Network using Pre-Programmed Resistive Device for Pattern Recognition

Choi, Wooseok, Moon, Kibong, Kwak, Myonghoon, Sung, Changhyuck, Lee, Jongwon, Song, Jeonghwan, Park, Jaesung, Amsalu Chekol, Solomon, Hwang, Hyunsang

Journal:

Solid-State Electronics

Year:

2018

Language:

english

File:

PDF, 964 KB

english, 2018

11

One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications

Tae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, Gunuk Wang, Dong-Yu Kim, Hyunsang Hwang, Takhee Lee

Journal:

Advanced Materials

Year:

2009

Language:

english

File:

PDF, 301 KB

english, 2009

12

Hybrid Nonvolatile Memory Devices: One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications (Adv. Mater. 24/2009)

Tae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, Gunuk Wang, Dong-Yu Kim, Hyunsang Hwang, Takhee Lee

Journal:

Advanced Materials

Year:

2009

File:

PDF, 303 KB

2009

13

Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection

Man Chang, Tae-Wook Kim, Joonmyoung Lee, Minseok Jo, Seonghyun Kim, Seungjae Jung, Hyejung Choi, Takhee Lee, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 411 KB

english, 2009

14

Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing

Man Chang, Musarrat Hasan, Seungjae Jung, Hokyung Park, Minseok Jo, Hyejung Choi, Moonjae Kwon, Hyunsang Hwang, Sangmoo Choi

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 314 KB

english, 2007

15

The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

Joonmyoung Lee, Hyejung Choi, Dong-jun Seong, Jaesik Yoon, Jubong Park, Seungjae Jung, Wootae Lee, Man Chang, Chunhum Cho, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 460 KB

english, 2009

16

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

Jaesik Yoon, Joonmyoung Lee, Hyejung Choi, Ju-Bong Park, Dong-jun Seong, Wootae Lee, Chunhum Cho, Seonghyun Kim, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 542 KB

english, 2009

17

Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels

Seonghyun Kim, Minseok Jo, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Man Chang, Chunhum Cho, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 534 KB

english, 2011

18

Mechanism of current hysteresis in reduced rutile TiO2crystals for resistive memory

R. Dong, D. S. Lee, M. B. Pyun, M. Hasan, H. J. Choi, M. S. Jo, D. J. Seong, M. Chang, S. H. Heo, J. M. Lee, H. K. Park, Hyunsang Hwang

Journal:

Applied Physics A: Materials Science & Processing

Year:

2008

Language:

english

File:

PDF, 659 KB

english, 2008

19

Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5

Hyunjun Sim, Dooho Choi, Dongsoo Lee, Musarrat Hasan, Chandan B. Samantaray, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.37 MB

english, 2005

20

Resistance-switching Characteristics of polycrystalline Nb2O5 for nonvolatile memory application

Hyunjun Sim, Dooho Choi, Dongsoo Lee, Sunae Seo, Myong-Jae Lee, In-Kyeong Yoo, Hyunsang Hwang

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

21

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application

Hyunjun Sim,, Hyejung Choi,, Dongsoo Lee,, Man Chang,, Dooho Choi,, Yunik Son,, Eun-Hong Lee,, Wonjoo Kim,, Yoondong Park,, In-Kyeong Yoo,, Hyunsang Hwang,

Year:

2005

Language:

english

File:

PDF, 747 KB

english, 2005

22

Identifying botnets by capturing group activities in DNS traffic

Hyunsang Choi, Heejo Lee

Journal:

Computer Networks

Year:

2012

Language:

english

File:

PDF, 603 KB

english, 2012

23

MIM-type cell selector for high-density and low-power cross-point memory application

Jungho Shin, Godeuni Choi, Jiyong Woo, Jubong Park, Sangsu Park, Wootae Lee, Seonghyun Kim, Myungwoo Son, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2012

Language:

english

File:

PDF, 576 KB

english, 2012

24

Operation Voltage Control in Complementary Resistive Switches Using Heterodevice

Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Siddik, M., Eujun Cha, Hyunsang Hwang

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 436 KB

english, 2012

25

High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications

Sanghun Jeon, Jeong Hee Han, Jung Hoon Lee, Sangmoo Choi, Hyunsang Hwang, Chungwoo Kim

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 799 KB

english, 2005

26

Reproducible hysteresis and resistive switching in metal-Cu[sub x]O-metal heterostructures

Dong, R., Lee, D. S., Xiang, W. F., Oh, S. J., Seong, D. J., Heo, S. H., Choi, H. J., Kwon, M. J., Seo, S. N., Pyun, M. B., Hasan, M., Hwang, Hyunsang

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 442 KB

english, 2007

27

[IEEE 7th IEEE International Conference on Computer and Information Technology (CIT 2007) - Aizu-Wakamatsu, Fukushima, Japan (2007.10.16-2007.10.19)] 7th IEEE International Conference on Computer and Information Technology (CIT 2007) - Botnet Detection by Monitoring Group Activities in DNS Traffic

Choi, Hyunsang, Lee, Hanwoo, Lee, Heejo, Kim, Hyogon

Year:

2007

Language:

english

File:

PDF, 259 KB

english, 2007

28

Defect engineering: reduction effect of hydrogen atom impurities in HfO 2 -based resistive-switching memory devices

Kim, Seonghyun, Lee, Daeseok, Park, Jubong, Jung, Seungjae, Lee, Wootae, Shin, Jungho, Woo, Jiyong, Choi, Godeuni, Hwang, Hyunsang

Journal:

Year:

2012

Language:

english

File:

PDF, 1.11 MB

english, 2012

29

Electrokinetic separation of biomolecules through multiple nano-pores on membrane

Kim, Yunho, Cha, Misun, Choi, Yosep, Joo, Hyunsang, Lee, Junghoon

Journal:

Chemical Physics Letters

Year:

2013

Language:

english

File:

PDF, 935 KB

english, 2013

30

Selector-less RRAM with non-linearity of device for cross-point array applications

Woo, Jiyong, Lee, Daeseok, Choi, Godeuni, Cha, Euijun, Kim, Seonghyun, Lee, Wootae, Park, Sangsu, Hwang, Hyunsang

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

31

Dependence of the Metal Electrode and Improved Pulse Switching Speed of La[sub 0.7]Ca[sub 0.3]MnO[sub 3] as a Resistance Change Memory Device

Hasan, Musarrat, Dong, Rui, Choi, Hyejung, Yoon, Jaesik, Park, Ju-bong, Seong, Dong-joon, Hwang, Hyunsang

Journal:

Journal of The Electrochemical Society

Year:

2009

Language:

english

File:

PDF, 456 KB

english, 2009

32

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

Kim, Seonghyun, Park, Jubong, Woo, Jiyong, Cho, Chunhum, Lee, Wootae, Shin, Jungho, Choi, Godeuni, Park, Sangsu, Lee, Daeseok, Lee, Byoung Hun, Hwang, Hyunsang

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.13 MB

english, 2013

33

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

Son, Myungwoo, Lee, Joonmyoung, Park, Jubong, Shin, Jungho, Choi, Godeuni, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 421 KB

english, 2011

34

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

Dong-jun Seong, M. Hassan, Hyejung Choi, Joonmyoung Lee, Jaesik Yoon, Ju-bong Park, Wootae Lee, Min-suk Oh, Hyunsang Hwang

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 461 KB

english, 2009

35

High Current Density and Nonlinearity Combination of Selection Device Based on TaO x /TiO 2 /TaO x Structure for One Selector–One Resistor Arrays

Lee, Wootae, Park, Jubong, Kim, Seonghyun, Woo, Jiyong, Shin, Jungho, Choi, Godeuni, Park, Sangsu, Lee, Daeseok, Cha, Euijun, Lee, Byoung Hun, Hwang, Hyunsang

Journal:

Year:

2012

Language:

english

File:

PDF, 1.65 MB

english, 2012

36

Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High- k Gate Dielectric

Yang, Hyundoek, Son, Yunik, Choi, Hyejung, Choi, Sangmoo, Hwang, Hyunsang

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 113 KB

english, 2005

37

Electrical Characteristics of Metal-Oxide-Semiconductor Device with Sc Gate on Atomic-Layer-Deposited HfO 2

Yang, Hyundoek, Park, Hokyung, Lee, Dongsoo, Choi, Sangmoo, Hwang, Hyunsang

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 213 KB

english, 2005

38

Improvement of reproducible hysteresis and resistive switching in metal-La[sub 0.7]Ca[sub 0.3]MnO[sub 3]-metal heterostructures by oxygen annealing

Dong, R., Xiang, W. F., Lee, D. S., Oh, S. J., Seong, D. J., Heo, S. H., Choi, H. J., Kwon, M. J., Chang, M., Jo, M., Hasan, M., Hwang, Hyunsang

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 512 KB

english, 2007

39

Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance

Yang, Hyundoek, Son, Yunik, Choi, Sangmoo, Hwang, Hyunsang

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 191 KB

english, 2005

40

[IEEE 4th IEEE Conference on Nanotechnology, 2004. - Munich, Germany (16-19 Aug. 2004)] 4th IEEE Conference on Nanotechnology, 2004. - Triple high k stacks (AI/sub 2/O/sub 3//HfO/sub 2//AI/sub 2/O/sub 3/) with high pressure (10atm) H/sub 2/and D/sub 2/ annealing for SONOS type flash memory device applications

Sanghun Jeon,, Sangmoo Choi,, Hokyung Park,, Hyunsang Hwang,, Jung Hee Han,, Hisun Chae,, Soo Doo Chae,, Ju Hyung Kim,, Moon Kyung Kim,, Youn Seok Jeong,, Yoondong Park,, Sunare Seo,, Jo W

Year:

2004

Language:

english

File:

PDF, 196 KB

english, 2004

41

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

Jung, Seungjae, Siddik, Manzar, Lee, Wootae, Park, Jubong, Xinjun Liu,, Jiyong Woo,, Godeuni Choi,, Lee, Joonmyoung, Lee, Nodo, Jang, Yun Hee, Hwang, Hyunsang

Year:

2011

Language:

english

File:

PDF, 791 KB

english, 2011

42

Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode

Sanghun Jeon,, Jeong Hee Han,, Junghoon Lee,, Sangmoo Choi,, Hyunsang Hwang,, Chungwoo Kim,

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 129 KB

english, 2006

43

[IEEE 2006 7th Annual Non-Volatile Memory Technology Symposium - San Mateo, CA, USA (2006.11.5-2006.11.8)] 2006 7th Annual Non-Volatile Memory Technology Symposium - Resistance Switching Characteristics of Metal Oxide and Schottky Junction for Nonvolatile Memory Applications

Lee, Dongsoo, Xiang, Wenfeng, Sung, Dongjun, Dong, Rui, Oh, Seokjoon, Choi, Hyejung, Hwang, Hyunsang

Year:

2006

Language:

english

File:

PDF, 2.99 MB

english, 2006

44

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Resistive switching characteristics of solution-processible TiOx using nano-scale via-hole structures

Seungjae Jung,, Tae-Wook Kim,, Hyejung Choi,, Jaemin Kong,, Ju-Bong Park,, Minseok Jo,, Seonghyun Kim,, Wootae Lee,, Joonmyoung Lee,, Takhee Lee,, Kwanghee Lee,, Hyunsang Hwang,

Year:

2009

Language:

english

File:

PDF, 271 KB

english, 2009

45

Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-$k$ MOSFETs

Minseok Jo,, Seonghyun Kim,, Seungjae Jung,, Ju-Bong Park,, Joonmyoung Lee,, Hyung-Suk Jung,, Choi, R., Hyunsang Hwang,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 410 KB

english, 2010

46

Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs

Hokyung Park,, Rino Choi,, Byoung Hun Lee,, Seung-Chul Song,, Man Chang,, Young, C.D., Bersuker, G., Lee, J.C., Hyunsang Hwang,

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 108 KB

english, 2006

47

Improved interface quality and charge-trapping characteristics of MOSFETs with high-/spl kappa/ gate dielectric

Hokyung Park,, Rahman, M.S., Man Chang,, Byoung Hun Lee,, Rino Choi,, Young, C.D., Hyunsang Hwang,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 131 KB

english, 2005

48

[IEEE 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2012.06.10-2012.06.11)] 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - Bidirectional selection device characteristics of ultra-thin (<3nm) TiO2 layer for 3D vertically stackable ReRAM application

Woo, Jiyong, Park, Jubong, Shin, Jungho, Choi, Godeuni, Kim, Seonghyun, Lee, Wootae, Park, Sangsu, Lee, Daeseok, Cha, Euijun, Hwang, Hyunsang

Year:

2012

Language:

english

File:

PDF, 378 KB

english, 2012

49

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Impact of flash annealing on performance and reliability of high-κ/metal-gate MOSFETs for sub-45 nm CMOS

Kalra, Pankaj, Majhi, Prashant, Heh, Dawei, Bersuker, Gennadi, Young, Chadwin, Vora, Nikhil, Harris, Rusty, Kirsch, Paul, Choi, Rino, Chang, Man, Lee, Joonmyoung, Hwang, Hyunsang, Tseng, Hsing-Huang,

Year:

2007

Language:

english

File:

PDF, 1.92 MB

english, 2007

50

[IEEE 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop - Monterey, CA, USA (Feb 12-16 2006)] 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop - Resistance switching of Al doped ZnO for Non Volatile Memory applications

Dongsoo Lee,, Dae-Kue Hwang,, Man Chang,, Yunik Son,, Dong-jun Seong,, Dooho Choi,, Hyunsang Hwang,

Year:

2006

Language:

english

File:

PDF, 303 KB

english, 2006